Transport Properties in Gapped Bilayer Graphene
arXiv:2101.09473 · doi:10.1016/j.physe.2021.114835
Abstract
We investigate transport properties through a rectangular potential barrier in AB-stacked bilayer graphene (AB-BLG) gapped by dielectric layers. Using the Dirac-like Hamiltonian with a transfer matrix approach we obtain transmission and reflection probabilities as well as the associated conductance. For two-band model and at normal incidence, we find extra resonances appearing in transmission compared to biased AB-BLG, which are Fabry-Pérot resonance type. Now by taking into account the inter-layer bias, we show that both of transmission and anti-Klein tunneling are diminished. Regarding four band model, we find that the gap suppresses transmission in an energy range by showing some behaviors look like "Mexican hats". We examine the total conductance and show that it is affected by the gap compared to AA-stacked bilayer graphene. In addition, we find that the suppression in conductance is more important than that for biased AB-BLG.
arXiv comment9 pages, 2 column, 7 figures
References in corpus (35)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
- Chiral tunneling and the Klein paradox in graphene
- Landau level degeneracy and quantum Hall effect in a graphite bilayer
- Asymmetry gap in the electronic band structure of bilayer graphene
- Quantum interference and Klein tunneling in graphene heterojunctions
- Electronic Properties of Graphene in a Strong Magnetic Field
- Evidence of Klein tunneling in graphene p-n junctions
- Electronic properties of graphene-based bilayer systems
- Origin of band gaps in graphene on hexagonal boron nitride
- Metal to insulator transition in epitaxial graphene induced by molecular doping
- Zero Energy Modes and Gate-Tunable Gap in Graphene on hexagonal Boron Nitride
- Strong covalent bonding between two graphene layers
- Semiconducting graphene from highly ordered substrate interactions
- Ballistic transmission through a graphene bilayer
- Electron Interactions and Gap Opening in Graphene Superlattices
- Transmission through a biased graphene bilayer barrier
- Theory of spin-orbit coupling in bilayer graphene
- Spontaneous Strains and Gap in Graphene on Boron Nitride
- Instabilities of the AA-stacked graphene bilayer
- Bilayer graphene with single and multiple electrostatic barriers: band structure and transmission
- Stacking Sequence Dependence of Graphene Layers on SiC(000-1) - Experimental and Theoretical Investigation
- Four band tunneling in bilayer graphene
- Dirac gap-induced graphene quantum dot in an electrostatic potential
- Kronig-Penney model on bilayer graphene: spectrum and transmission periodic in the strength of the barriers
- Atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer
- Band gap engineering in AA-stacked bilayer graphene
- Electrostatic and Magnetic Fields in Bilayer Graphene
- Valley Order and Loop Currents in Graphene on Hexagonal Boron Nitride
- Goos-Hänchen Shifts in AA-Stacked Bilayer Graphene Superlattices
- Substrate effects on transport properties of a biased AA-stacked bilayer graphene
- Ultraviolet absorption spectrum of the half-filled bilayer graphene
- Band structure asymmetry of bilayer graphene revealed by infrared spectroscopy
Cited by in corpus (6)
- Chiral limits and effect of light on the Hofstadter butterfly in twisted bilayer graphene
- Transport properties of hybrid single-bilayer graphene interfaces in magnetic field
- Magnetic field effect on tunneling through triple barrier in AB bilayer graphene
- Transport properties in ABC-ABA-ABC trilayer graphene junctions
- Tunneling in ABC trilayer graphene superlattice
- Klein tunneling through triple barrier in AB bilayer graphene