Helium Ion Microscopy for Reduced Spin Orbit Torque Switching Currents
arXiv:2005.07626 · doi:10.1021/acs.nanolett.0c02060
Abstract
Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here we demonstrate how focused helium ion beam irradiation can modulate the local magnetic anisotropy of a Co thin film at the microscopic scale. Real-time in-situ characterisation using the anomalous Hall effect showed up to an order of magnitude reduction of the magnetic anisotropy under irradiation, and using this, multi-level switching is demonstrated. The result is that spin-switching current densities, down to 800 kA cm, can be achieved on predetermined areas of the film, without the need for lithography. The ability to vary critical currents spatially has implications not only for storage elements, but also neuromorphic and probabilistic computing.
Main text: 22 pages, 3 figures, 2 tables, 1 TOC graphic. Included SI: 2 pages, 2 figures
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Cited by in corpus (4)
- Deterministic Generation and Guided Motion of Magnetic Skyrmions by Focused He-Ion Irradiation
- Deterministic multi-level spin orbit torque switching using He+ microscopy patterning
- Grayscale control of local magnetic properties with direct-write laser annealing
- Mechanism of Oxygen Reduction via Chemical Affinity in NiO/SiO2 Interfaces Irradiated with keV Energy Hydrogen and Helium Ions for Heterostructure Fabrication