Mechanism of Oxygen Reduction via Chemical Affinity in NiO/SiO2 Interfaces Irradiated with keV Energy Hydrogen and Helium Ions for Heterostructure Fabrication
arXiv:2501.17101 · doi:10.1039/D4NH00460D
Abstract
Low-energy light ion beams are an essential resource in lithography for nanopatterning magnetic materials and interfaces due to their ability to modify the structure and properties of metamaterials. Here we create ferromagnetic/non-ferromagnetic heterostructures with a controlled layer thickness and nanometer-scale precision. For this, hydrogen ion (H+) irradiation is used to reduce the antiferromagnetic nickel oxide (NiO) layer into ferromagnetic Ni with lower fluence than in the case of helium ion (He+) irradiation. Our results indicate that H+ chemical affinity with oxygen is the primary mechanism for efficient atom remotion, as opposed to He+ irradiation, where the chemical affinity for oxygen is negligible.
References in corpus (9)
- The building blocks of magnonics
- The missing atom as a source of carbon magnetism
- Room-temperature ferromagnetism in graphite driven by 2D networks of point defects
- Van der Waals heterostructures for spintronics and opto-spintronics
- The effect of inserted NiO layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures
- An upper bound for the magnetic force gradient in graphite
- Helium Ion Microscopy for Reduced Spin Orbit Torque Switching Currents
- Focused ion beam direct writing of magnetic patterns with controlled structural and magnetic properties
- Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces