16 citations · 16 across the 2 of their papers we have counts for
6 papers
Magnetic reversal and pinning in a perpendicular zero moment half-metal
Niclas Teichert, Gwenael Atcheson, Katarzyna Siewierska +6
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferr…
Helium Ion Microscopy for Reduced Spin Orbit Torque Switching Currents
Peter Dunne, Ciaran Fowley, Gregor Hlawacek +11
Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to…
Single pulse all-optical toggle switching of magnetization without Gd: The example of Mn2RuxGa
C. Banerjee, N. Teichert, K. Siewierska +6
Energy-efficient control of magnetization without the help of a magnetic field is a key goal of spintronics. Purely heat-induced single-pulse all-optical toggle switching has been…
Imaging Domains in a Zero-Moment Half Metal
K. E. Siewierska, N. Teichert, R. Schäfer +1
We have a choice of methods for examining domains at the surface of a ferromagnet that depend on probing the stray field distribution, but these methods do not work in antiferromag…
Vanadium sacrificial layers as a novel approach for the fabrication of freestanding Heusler Shape Memory Alloys
Lars Helmich, Niclas Teichert, Walid Hetaba +4
In this study we report a method for the preparation of freestanding magnetocaloric thin films. Non-stoichiometric Heusler alloys Ni-Mn-Sn, Ni-Co-Mn-Sn and Ni-Co-Mn-Al are prepared…
Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions
Niclas Teichert, Alexander Boehnke, Anna Behler +3
The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory device…