Study of the spin-pump-induced inverse spin-Hall effect in Bi doped n-type Si

Abstract

An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the magnetization precession during ferromagnetic resonance in a thin permalloy (Py) layer deposited on a Si layer doped by phosphor and bismuth. From the angular dependences of the dc voltage for different Py/n-Si:Bi structures aligned along the [011] or [100] crystal axes, we were able to distinguish the planar Hall effect (PHE) and ISHE contributions. The ISHE dc voltage signal was proportional to sinθ*sin2θ product for the structure aligned to the [011] crystal axis and to sinθ*cos2θ for the [100] direction. In addition, the PHE dc voltage was observed for the angles corresponded to the sin2θ dependence. It means that for silicon as a many-valley semiconductor, the scattering of spins due to the spin-orbit potential induced by shallow donor in n-type material is dependent on the orientation of the valley axes relative to the direction of the magnetic field.

References in corpus (17)

• Spintronics: Fundamentals and applications
• Spin Hall effect
• Universal Intrinsic Spin-Hall Effect
• Dissipationless Quantum Spin Current at Room Temperature
• Enhanced Gilbert Damping in Thin Ferromagnetic Films
• Spin pumping and magnetization dynamics in metallic multilayers
• Electronic measurement and control of spin transport in Silicon
• A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Observation of the inverse spin Hall effect in silicon
• Electrical Detection of Magnetization Dynamics via Spin Rectification Effects
• Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
• Comment: "Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal / silicon dioxide contacts" [Nature Commun. 2:245 doi:10.1038/ncomms125 (2011)]
• Silicon spin communication
• Analysis of phonon-induced spin relaxation processes in silicon
• An investigation of the inverted Hanle effect in highly-doped Si
• Induced spin-orbit coupling in silicon thin films by bismuth doping