Epitaxial Growth of 2D Layered Transition Metal Dichalcogenides

Abstract

Transition metal dichalcogenide (TMD) monolayers and heterostructures have emerged as a compelling class of materials with transformative new science that may be harnessed for novel device technologies. These materials are commonly fabricated by exfoliation of flakes from bulk crystals, but wafer-scale epitaxy of single crystal films is required to advance the field. This article reviews the fundamental aspects of epitaxial growth of van der Waals bonded crystals specific to TMD films. The structural and electronic properties of TMD crystals are initially described along with sources and methods used for vapor phase deposition. Issues specific to TMD epitaxy are critically reviewed including substrate properties and film-substrate orientation and bonding. The current status of TMD epitaxy on different substrate types is discussed along with characterization techniques for large area epitaxial films. Future directions are proposed including developments in substrates, in situ and full wafer characterization techniques and heterostructure growth.

36 pages, 7 figures

References in corpus (19)

• Atomically thin MoS2: A new direct-gap semiconductor
• 2D materials and van der Waals heterostructures
• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation
• Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator
• Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2
• Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides
• Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
• Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator
• Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit
• Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene
• Layer-by-layer epitaxial growth of scalable WSe2 on sapphire by molecular-beam epitaxy
• Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures
• Highly-Oriented Atomically Thin Ambipolar MoSe${}_2$ Grown by Molecular Beam Epitaxy
• Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1
• Full orientation control of epitaxial MoS2 on hBN assisted by substrate defects
• Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction
• Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)
• Thickness characterization of atomically-thin WSe${}_2$ on epitaxial graphene by low-energy electron reflectivity oscillations

Cited by in corpus (7)

• Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
• Machine-learning-assisted analysis of transition metal dichalcogenide thin-film growth
• Recent Progress of Heterostructures Based on Two Dimensional Materials and Wide Bandgap Semiconductors
• Large-Area Transfer of 2D TMDCs Assisted by Water-soluble layer for Potential Device Applications
• Nonlinear optics in 2D materials: from classical to quantum
• Optically controlled single-valley exciton doublet states with tunable internal spin structures and spin magnetization generation
• Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene