Modelling radiation damage to pixel sensors in the ATLAS detector

Abstract

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of $10^{15}$ 1 MeV $n_{eq}/{cm}^2$, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 ($\le 10^{15}$ 1 MeV $n_{eq}/{cm}^2$).

arXiv comment57 pages in total, author list starting page 41, 22 figures, 7 tables, published in Journal of Instrumentation. All figures including auxiliary figures are available at http://atlas.web.cern.ch/Atlas/GROUPS/PHYSICS/PAPERS/IDET-2017-10

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Cited by in corpus (9)

• Software and computing for Run 3 of the ATLAS experiment at the LHC
• The ATLAS Experiment at the CERN Large Hadron Collider: A Description of the Detector Configuration for Run 3
• Measurements of sensor radiation damage in the ATLAS inner detector using leakage currents
• Expected Tracking Performance of the ATLAS Inner Tracker at the High-Luminosity LHC
• Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector
• A lightweight algorithm to model radiation damage effects in Monte Carlo events for High-Luminosity LHC experiments
• Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC
• Study of Particle Fluence Effects on Collected Charge and Depletion Voltage of the ATLAS IBL Planar Pixel Sensors
• Prediction of Leakage Current and Depletion Voltage in Silicon Detectors under Extra-Terrestrial Radiation Conditions