New insights into the electron trapping mechanism in LaAlO_3 / SrTiO3 heterostructures
arXiv:1902.07648 · doi:10.1103/PhysRevLett.124.017702
Abstract
In LaAlO3/SrTiO3 heterostructures, a commonly observed but poorly understood phenomenon is that of electron trapping in back-gating experiments. In this work, by combining magnetotransport measurements and self-consistent Schroedinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. We find that the trapped electrons follow an exponentially decaying spatial distribution away from the interface. However, contrary to earlier observations, we find that the Fermi level remains well within the quantum well. The enhanced trapping of electrons induced by the gate voltage can therefore not be explained by a thermal escape mechanism. Further gate sweeping experiments strengthen our conclusion that the thermal escape mechanism is not valid. We propose a new mechanism which involves the electromigration and clustering of oxygen vacancies in SrTiO3. Our work indicates that electron trapping is a universal phenomenon in SrTiO3-based two-dimensional electron systems.
manuscript + supplementary information, 8 pages
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Cited by in corpus (11)
- Tuning Rashba spin-orbit coupling at LaAlO3/SrTiO3 interfaces by band filling
- Nanoscale control of the metal-insulator transition at LAO/KTO (110) and LAO/KTO (111) interfaces
- Electron trapping and detrapping in an oxide two-dimensional electron gas: The role of ferroelastic twin walls
- Ionic liquid gating of SrTiO lamellas fabricated with a focused ion beam
- Irreversible multi-band effects and Lifshitz transitions at the LaAlO3/SrTiO3 interface under field effect
- Non-collinear and strongly asymmetric polar moments at back-gated SrTiO3 interfaces
- Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces
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- Density-tuned isotherms and dynamic change at phase transition in a gate-controlled superconducting system