Metal-Insulator Transition of the LaAlO3-SrTiO3 Interface Electron System
arXiv:1009.0709 · doi:10.1103/PhysRevB.83.075402
Abstract
We report on a metal-insulator transition in the LaAlO3-SrTiO3 interface electron system, of which the carrier density is tuned by an electric gate field. Below a critical carrier density n_c ranging from 0.5-1.5 * 10^13/cm^2, LaAlO3-SrTiO3 interfaces, forming drain-source channels in field-effect devices are non-ohmic. The differential resistance at zero channel bias diverges within a 2% variation of the carrier density. Above n_c, the conductivity of the ohmic channels has a metal-like temperature dependence, while below n_c conductivity sets in only above a threshold electric field. For a given thickness of the LaAlO3 layer, the conductivity follows a sigma_0 ~(n - n_c)/n_c characteristic. The metal-insulator transition is found to be distinct from that of the semiconductor 2D systems.
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References in corpus (5)
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Cited by in corpus (19)
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- New insights into the electron trapping mechanism in LaAlO_3 / SrTiO3 heterostructures
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- Anomalous Transport in Sketched Nanostructures at the LaAlO3/SrTiO3 Interface
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- Electric-field-induced pyroelectric order and localization of the confined electrons in LaAlO3/SrTiO3 heterostructures
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- Non-universal current flow near the metal-insulator transition in an oxide interface
- Influence of the ferroelectric quantum critical point on SrTiO interfaces
- Temperature-Dependent Band Structure of SrTiO Interfaces
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- Modified transverse Ising model for the dielectric properties of SrTiO films and interfaces