activity
20032016
most citedMagnetism and superconductivity at LAO/STO-interfaces: the role of Ti 3d interface electrons

154 citations · 528 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.str-el2016★ 15 cited

Artificial Atoms Based on Correlated Materials

Jochen Mannhart, Hans Boschker, Thilo Kopp +1

Low-dimensional electron systems fabricated from quantum matter have in recent years become available and are being explored with great intensity. This article gives an overview of…

cond-mat.mes-hall2013★ 42 cited

Emerging magnetism and electronic phase separation at titanate interfaces

N. Pavlenko, T. Kopp, J. Mannhart

The emergence of magnetism in otherwise nonmagnetic compounds and its underlying mechanisms have become the subject of intense research. Here we demonstrate that the nonmagnetic ox…

cond-mat.str-el2012★ 137 cited

Oxygen vacancies at titanate interfaces: two-dimensional magnetism and orbital reconstruction

N. Pavlenko, T. Kopp, E. Y. Tsymbal +2

We show that oxygen vacancies at titanate interfaces induce a complex multiorbital reconstruction which involves a lowering of the local symmetry and an inversion of t2g and eg orb…

cond-mat.supr-con2011★ 12 cited

Interface-induced d-wave pairing

C. Stephanos, T. Kopp, J. Mannhart +1

We discuss a scenario for interface-induced superconductivity involving pairing by dipolar excitations proximate to a two-dimensional electron system controlled by a transverse ele…

cond-mat.str-el2011★ 154 cited

Magnetism and superconductivity at LAO/STO-interfaces: the role of Ti 3d interface electrons

N. Pavlenko, T. Kopp, E. Y. Tsymbal +2

Ferromagnetism and superconductivity are in most cases adverse. However, recent experiments reveal that they coexist at interfaces of LaAlO3 and SrTiO3. We analyze the magnetic sta…

cond-mat.mtrl-sci2010★ 43 cited

Metal-Insulator Transition of the LaAlO3-SrTiO3 Interface Electron System

Y. C. Liao, T. Kopp, C. Richter +2

We report on a metal-insulator transition in the LaAlO3-SrTiO3 interface electron system, of which the carrier density is tuned by an electric gate field. Below a critical carrier…

cond-mat.mtrl-sci2009★ 112 cited

Two-dimensional electron liquid state at LaAlO3-SrTiO3 interfaces

M. Breitschaft, V. Tinkl, N. Pavlenko +8

Using tunneling spectroscopy we have measured the spectral density of states of the mobile, two-dimensional electron system generated at the LaAlO3-SrTiO3 interface. As shown by th…

cond-mat.supr-con2003★ 13 cited

Electronic Transport through YBCO Grain Boundary Interfaces between 4.2 K and 300 K

C. W. Schneider, S. Hembacher, G. Hammerl +5

The current-induced dissipation in YBCO grain boundary tunnel junctions has been measured between 4.2 K and 300 K. It is found that the resistance of 45 degree (100)/(110) junction…