In situ compensation method for high-precision and high-sensitivity integral magnetometry

Abstract

An ongoing process of miniaturization of spintronics and magnetic-films-based devices, as well as a growing necessity for basic material research place stringent requirements for sensitive and accurate magnetometric measurements of minute magnetic constituencies deposited on large magnetically responsive carriers. However, the most popular multipurpose commercial superconducting quantum interference device (SQUID) magnetometers are not object-selective probes, so the sought signal is usually buried in the magnetic response of the carrier, contaminated by signals from the sample support, system instabilities and additionally degraded by an inadequate data reduction. In this report a comprehensive method based on the in situ magnetic compensation for mitigating all these weak elements of SQUID-based magnetometry is presented. Practical solutions and proper expressions to evaluate the final outcome of the investigations are given. Their universal form allows to employ the suggested design in investigations of a broad range of specimens of different sizes, shapes and compositions. The method does not require any extensive numerical modelling, it relies only on the data taken from the standard magnetometer output. The solution can be straightforwardly implemented in every field where magnetic investigations are of a prime importance, including in particular emerging new fields of topological insulators, 3D-Dirac semimetals and 2D-materials.

22 pages, 6 figures, ancillary Supplementary Materials file

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• Sources of experimental errors in the observation of nanoscale magnetism
• Sensitive SQUID magnetometry for studying nano-magnetism
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Cited by in corpus (20)

• Spin flop and crystalline anisotropic magnetoresistance in CuMnAs
• Experimental search for the origin of low-energy modes in topological materials
• Improved-Sensitivity Integral SQUID Magnetometry of (Ga,Mn)N Thin Films in Proximity to Mg-doped GaN
• Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe${}_y$N Nanocrystals Embedded in GaN
• A Simplified Method of the Assessment of Magnetic Anisotropy of Commonly Used Sapphire Substrates in SQUID Magnetometers
• Magnetic properties of wurtzite (Ga,Mn)As
• Electrical characteristics of vertical-geometry Schottky junction to magnetic insulator (Ga,Mn)N heteroepitaxially grown on sapphire
• Crystal field model simulations of magnetic response of pairs, triplets and quartets of Mn${}^{3+}$ ions in GaN
• Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers
• Spin orbital reorientation transitions induced by magnetic field
• In Situ Compensation Method for Precise Integral SQUID Magnetometry of Miniscule Biological, Chemical, and Powder Specimens Requiring the Use of Capsules
• Magnetic Phase Diagram of Mn3+xSn1-x Epitaxial Thin Films: Extending the Anomalous Hall Effect to Low Temperatures via Intrinsic Alloying
• Anomalous Hall Effect in Bismuth
• Bulk-like magnetic properties in MBE-grown unstrained, antiferromagnetic CuMnSb
• Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
• Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling
• Coexistence of Antiferromagnetic Cubic and Ferromagnetic Tetragonal Polymorphs in Epitaxial CuMnSb
• Ferromagnetic Resonance in a Magnetically Dilute Percolating Ferromagnet: An Experimental and Theoretical Study
• Pair anisotropy in disordered magnetic systems
• Reliable Magnetometry for Antiferromagnets and Thin Films: Correcting Substrate Artifacts in Mn3Sn/MgO Systems