Synthesis, Crystal Structure, and Thermoelectric Properties of Layered Antimony Selenides REOSbSe2 (RE = La, Ce)
arXiv:1805.07850 · doi:10.7566/JPSJ.87.074703
Abstract
Inspired by the recent first-principles calculations showing the high thermoelectric performance of layered pnictogen chalcogenides, we experimentally characterise the crystal structure and high-temperature transport properties of the layered antimony selenides REOSbSe2 (RE = La, Ce). The crystal structure of REOSbSe2 was the tetragonal P4/nmm space group, consisting of alternate stacks of SbSe2 and REO layers. These two compounds were n-type semiconductors. The optical band gaps of LaOSbSe2 and CeOSbSe2 were evaluated to be 1.0 and 0.6 eV, respectively. The room-temperature thermal conductivity was 1.5 Wm-1K-1 for RE = La and 0.8 Wm-1K-1 for RE = Ce. These relatively low thermal conductivities were comparable to those of isostructural layered bismuth chalcogenides. We substituted O2- with F- ions to introduce electrons as charged carriers to optimize the thermoelectric performance, but increasing the electrical conductivity was still challenging.
arXiv commentto be published in J. Phys. Soc. Jpn
References in corpus (19)
- Superconductivity in novel BiS2-based layered superconductor LaO1-xFxBiS2
- Novel BiS2-based layered superconductor Bi4O4S3
- Finding unprecedentedly low-thermal-conductivity half-Heusler semiconductors via high-throughput materials modeling
- Minimal electronic models for superconducting BiS layers
- Charge-density wave, superconductivity and -electron valence instability in EuBiSF
- In-plane chemical pressure essential for superconductivity in BiCh2-based (Ch: S, Se) layered structure
- Electromagnetic properties and electronic structure of iron-based layered superconductor LaOFeP
- Role of the Ce valence in the coexistence of superconductivity and ferromagnetism of CeOFBiS revealed by Ce -edge x-ray absorption spectroscopy
- Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex
- High thermoelectric performance and low thermal conductivity of densified LaOBiSSe
- Evolution of Anisotropic Displacement Parameters and Superconductivity with Chemical Pressure in BiS2-Based REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd)
- Thermoelectric properties of new Bi-chalcogenide layered compounds
- Superconductivity in CeOBiS2 with cerium valence fluctuation
- Electrically tunable multiple Dirac cones in thin films of (LaO)2(SbSe2)2 family of materials
- Superconductivity and its Enhancement under High Pressure in "F-free" Single Crystals of CeOBiS
- Electronic Origins of Large Thermoelectric Power Factor of LaOBiS2-xSex
- Localized and mixed valence state of Ce in superconducting and ferromagnetic CeOFBiS revealed by x-ray absorption and photoemission spectroscopy
- Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion
- Electrical and Thermal Transport of Layered Bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K
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- Material Development and Physical Properties of BiS2-Based Layered Compounds
- Pressure-induced Insulator to Metal Transition of Mixed Valence Compound Ce(O,F)SbS
- First-principles study of LaOPbBiS and its analogous compounds as thermoelectric materials
- First-principles study of defect formation energies in LaOS ( Sb, Bi)
- Effect of Bi Substitution on Thermoelectric Properties of SbSe2-based Layered Compounds NdOFSbBiSe
- Growth and physical properties of Ce(O,F)Sb(S,Se)2 single crystals with site-selected chalcogen atoms
- Pressure-induced superconductivity in layered pnictogen diselenide NdOFSbBiSe (x = 0.3 and 0.7)
- Crystal Structure and Thermoelectric Transport Properties of As-Doped Layered Pnictogen Oxyselenides NdO0.8F0.2Sb1-xAsxSe2