Strain Assessment in Graphene Through the Raman 2D' Mode
arXiv:1804.09795 · doi:10.1021/acs.jpcc.5b09643
Abstract
Accurate and simple local strain assessment in graphene is one of the crucial tasks in device characterization. Raman spectroscopy is often used for that purpose through monitoring of the G and 2D modes. However, the shifts of those two bands might be biased, especially under uniaxial strain, by the effects of charge-transfer doping. Therefore, it is extremely desirable to use another Raman band, less affected by doping, but with a defined and measurable behavior under strain. The Raman 2D' mode is in this sense the ideal feature for the evaluation of strain levels in stretched graphene monolayers, suitable for this task even under different experimental conditions. The sensitivity and accuracy of the approach through 2D' mode is on the same level as through the G mode, however, the clear advantage of the 2D' arises when doping effects are present in the sample.
arXiv comment21 pages
References in corpus (26)
- Raman spectroscopy as a versatile tool for studying the properties of graphene
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- Optical Separation of Mechanical Strain from Charge Doping in Graphene
- All-graphene integrated circuits via strain engineering
- Interfacial Stress Transfer in a Graphene Monolayer Nanocomposite
- Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands
- Non-adiabatic Kohn-anomaly in a doped graphene monolayer
- Chemical reactivity imprint lithography on graphene: Controlling the substrate influence on electron transfer reactions
- Raman spectroscopy of graphene and bilayer under biaxial strain: bubbles and balloons
- Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene
- Strain-dependent Splitting of Double Resonance Raman Scattering Band in Graphene
- Raman 2D-Band Splitting in Graphene: Theory and Experiment
- Compression Behavior of Single-layer Graphene
- Interaction between graphene and copper substrate: The role of lattice orientation
- Theory of resonant multiphonon Raman scattering in graphene
- Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
- Stress Transfer Mechanisms at the Submicron Level for Graphene/Polymer Systems
- Intrinsic lineshape of the Raman 2D-mode in freestanding graphene monolayers
- Failure Processes in Embedded Monolayer Graphene under Axial Compression
- Raman spectroscopy and In-situ Raman spectroelectrochemistry of isotopically engineered graphene systems
- Suspended Monolayer Graphene under True Uniaxial Deformation
- Theoretical polarization dependence of the two-phonon double-resonant Raman spectra of graphene
- Dominant Phonon Wavevectors and Strain-induced Splitting of the 2D Graphene Raman Mode
- Low B Field Magneto-Phonon Resonances in Single-Layer and Bilayer Graphene
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- Twistronics: A turning point in 2D quantum materials
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- Nanostructures in suspended mono- and bilayer epitaxial graphene
- Stress and charge transfer in uniaxially strained CVD graphene
- Effect of uniaxial strain on the optical Drude scattering in graphene
- Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene
- Graphene under direct compression: stress effects and interlayer coupling
- Nanomechanical strain concentration on a 2D nanobridge within a large suspended bilayer graphene for molecular mass detection