Theoretical polarization dependence of the two-phonon double-resonant Raman spectra of graphene
arXiv:1206.3827 · doi:10.1016/j.carbon.2012.11.006
Abstract
The experimental Raman spectra of graphene exhibit a few intense two-phonon bands, which are enhanced through double-resonant scattering processes. Though there are many theoretical papers on this topic, none of them predicts the spectra within a single model. Here, we present results for the two-phonon Raman spectra of graphene calculated by means of the quantum perturbation theory. The electron and phonon dispersions, electronic lifetime, electron-photon and electron-phonon matrix elements, are all obtained within a density-functional-theory-based non-orthogonal tight-binding model. We study systematically the overtone and combination two-phonon Raman bands, and, in particular, the energy and polarization dependence of their Raman shift and intensity. We find that the ratio of the integrated intensities for parallel and cross polarized light for all two-phonon bands is between 0.33 and 0.42. Our results are in good agreement with the available experimental data.
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- Strain Assessment in Graphene Through the Raman 2D' Mode
- Two-phonon Raman bands of bilayer graphene: revisited
- Theoretical 2D Raman band of strained graphene
- Polarization dependence of double resonant Raman scattering band in bilayer graphene
- Stress and charge transfer in uniaxially strained CVD graphene
- Kohn anomaly of optical zone boundary phonons in uniaxial strained graphene: role of the electronic band structure
- Long-wavelength optical phonon behavior in uniaxial strained graphene: Role of electron-phonon interaction