Theoretical 2D Raman band of strained graphene

Abstract

We study the 2D Raman band of in-plane uniaxially strained graphene within a non-orthogonal tight-binding model. At non-zero strain, the obtained 2D band splits into two subbands at strain angles $0^{\circ }$ and $30^{\circ }$ or into three subbands at intermediate angles. The evolution of the 2D subbands is calculated systematically in the range of the accessible strains from -1% to 3% and for the commonly used laser photon energy from 1.5 eV to 3.0 eV. The strain rate and dispersion rate of the 2D subbands are derived and tabulated. In particular, these two quantities show large variations up to 50%. The results on the 2D subbands can be used for detecting and monitoring strain in graphene for nanoelectronics applications.

References in corpus (7)

• The electronic properties of graphene
• The Raman Fingerprint of Graphene
• Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
• Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands
• Raman 2D-Band Splitting in Graphene: Theory and Experiment
• Splitting of the Raman $2D$ band of graphene subjected to strain
• Theoretical polarization dependence of the two-phonon double-resonant Raman spectra of graphene

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• The Raman fingerprint of rhombohedral graphite
• Low-frequency phonons of few-layer graphene within a tight-binding model
• Uniaxial strain-induced Kohn anomaly and electron-phonon coupling in acoustic phonons of graphene
• Kohn anomaly of optical zone boundary phonons in uniaxial strained graphene: role of the electronic band structure
• Vibrational stability of graphene under combined shear and axial strains