The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

Abstract

We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium ions. The investigations show that the transport properties of the structure are determined by two parallel conduction channels (the channel associated with hole transport in the valence band and the channel associated with electron transport in the Mn impurity band) and that the ferromagnetic properties are determined by the electrons localized at the allowed states within the Mn impurity band. The results also help to understand the features of structures with the Mn δ-layer nearby the quantum well.

References in corpus (8)

• Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
• High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping
• Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band
• Self-compensation in manganese-doped ferromagnetic semiconductors
• Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
• Ion-beam modification of the magnetic properties of GaMnAs epilayers
• Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres
• Effect of Ga${}^{+}$ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers

Cited by in corpus (3)

• Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position
• High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers
• Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids