Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres

Abstract

We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.

12 pages, 5 figures

References in corpus (7)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
• Designing quantum dots for solotronics
• Spin-dependent tunneling in semiconductor heterostructures with a magnetic layer
• Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres
• Electronic and optical properties of InGaAs quantum wells with Mn-delta-doping GaAs barriers

Cited by in corpus (5)

• Direct determination of zero-field splitting for single Co${}^{2+}$ ion embedded in a CdTe/ZnTe quantum dot
• The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer
• Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres
• Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids
• The role of resident electrons in manifestation of a spin polarization memory effect in Mn delta-doped GaAs heterostructures