2 papers
physics.optics2021
The role of resident electrons in manifestation of a spin polarization memory effect in Mn delta-doped GaAs heterostructures
Mikhail Dorokhin, Mikhail Ved, Polina Demina +6
The spin-memory effect in the GaAs / InGaAs heterostructures with <Mn> layer in GaAs barrier have been investigated. The effect consists in spin polarization of Mn atoms due to…
cond-mat.mtrl-sci2018
Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids
F. C. D. Moraes, S. Ullah, M. G. A. Balanta +6
Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the…