activity
20152023
most citedHigh-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor

39 citations · 101 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2023★ 1 cited

Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure

Igor V. Rozhansky, Ina V. Kalitukha, Grigorii S. Dimitriev +6

Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to stu…

physics.optics2021★ 1 cited

The role of resident electrons in manifestation of a spin polarization memory effect in Mn delta-doped GaAs heterostructures

Mikhail Dorokhin, Mikhail Ved, Polina Demina +6

The spin-memory effect in the GaAs / InGaAs heterostructures with <Mn> layer in GaAs barrier have been investigated. The effect consists in spin polarization of Mn atoms due to…

physics.app-ph2019★ 15 cited

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

A. V. Kudrin, V. P. Lesnikov, Yu. A. Danilov +10

The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed l…

cond-mat.mtrl-sci2019★ 16 cited

Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position

A. V. Kudrin, V. P. Lesnikov, Yu. A. Danilov +11

The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composi…

cond-mat.mtrl-sci2018★ 5 cited

Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids

F. C. D. Moraes, S. Ullah, M. G. A. Balanta +6

Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the…

physics.app-ph2018★ 2 cited

The formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb layers

A. V. Kudrin, V. P. Lesnikov, D. A. Pavlov +8

Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated…

cond-mat.mes-hall2018★ 1 cited

Magnetic properties, chemical and phase composition of thin manganese silicide films fabricated by pulsed laser deposition

M. V. Dorokhin, Yu. M. Kuznetsov, V. P. Lesnikov +8

Manganese silicide (MnxSiy) thin films with Mn content (CMn) varied from 24 at. % to 52 at. % were grown on i-GaAs (100) substrates. Chemical, phase composition and room temperatur…

physics.app-ph2018★ 11 cited

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

A. V. Kudrin, O. V. Vikhrova, Yu. A. Danilov +7

We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically ac…

cond-mat.mtrl-sci2017★ 39 cited

High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor

A. V. Kudrin, Yu. A. Danilov, V. P. Lesnikov +6

The (In,Fe)Sb layers with the Fe content up to 13 at. % have been grown on (001) GaAs substrates using the pulsed laser deposition. The TEM investigations show that the (In,Fe)Sb l…

cond-mat.mes-hall2015★ 10 cited

Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres

M. A. G. Balanta, M. J. S. P. Brasil, F. Iikawa +6

We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quant…