activity
20172021
collaborators

8 papers

physics.optics2021

The role of resident electrons in manifestation of a spin polarization memory effect in Mn delta-doped GaAs heterostructures

Mikhail Dorokhin, Mikhail Ved, Polina Demina +6

The spin-memory effect in the GaAs / InGaAs heterostructures with <Mn> layer in GaAs barrier have been investigated. The effect consists in spin polarization of Mn atoms due to…

physics.app-ph2019

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

A. V. Kudrin, V. P. Lesnikov, Yu. A. Danilov +10

The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed l…

cond-mat.mtrl-sci2019

Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position

A. V. Kudrin, V. P. Lesnikov, Yu. A. Danilov +11

The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composi…

cond-mat.mtrl-sci2018

Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids

F. C. D. Moraes, S. Ullah, M. G. A. Balanta +6

Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the…

physics.app-ph2018

The formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb layers

A. V. Kudrin, V. P. Lesnikov, D. A. Pavlov +8

Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated…

cond-mat.mes-hall2018

Magnetic properties, chemical and phase composition of thin manganese silicide films fabricated by pulsed laser deposition

M. V. Dorokhin, Yu. M. Kuznetsov, V. P. Lesnikov +8

Manganese silicide (MnxSiy) thin films with Mn content (CMn) varied from 24 at. % to 52 at. % were grown on i-GaAs (100) substrates. Chemical, phase composition and room temperatur…