activity
20002023
most citedTheory of Magnetic Anisotropy in III_{1-x}Mn_{x}V Ferromagnets

334 citations · 357 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.dis-nn2023★ 4 cited

Laplacian Coarse Graining in Complex Networks

Matheus de C. Loures, Alan Albert Piovesana, José Antônio Brum

Complex networks can model a range of different systems, from the human brain to social connections. Some of those networks have a large number of nodes and links, making it imprac…

nlin.AO2017★ 2 cited

Inhibition as a determinant of activity and criticality in dynamical networks

Joao Pinheiro Neto, Marcus A. M. de Aguiar, José A. Brum +1

A certain degree of inhibition is a common trait of dynamical networks in nature, ranging from neuronal and biochemical networks, to social and technological networks. We study her…

cond-mat.mes-hall2015★ 10 cited

Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres

M. A. G. Balanta, M. J. S. P. Brasil, F. Iikawa +6

We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quant…

cond-mat.mes-hall2015★ 2 cited

Electronic and optical properties of InGaAs quantum wells with Mn-delta-doping GaAs barriers

Udson C. Mendes, M. A. G. Balanta, Maria J. S. P. Brasil +1

We present here the electronic structure and optical properties of InGaAs quantum wells with barrier doped with Manganese. We calculated the electronic states and optical emission…

cond-mat.mes-hall2001★ 4 cited

Effects of an electron gas on the negative trion in semiconductor quantum wells

Luis C. O. Dacal, Jose A. Brum

We present here the results of calculations of the negative trion binding energy in the presence of an electron gas. The screening of the Coulomb interaction and the Pauli exclusio…

cond-mat.mes-hall2001★ 1 cited

Binding energy of negatively charged exciton in a semiconductor quantum well: the role of interface defects

Luis C. O. Dacal, R. Ferreira, G. Bastard +1

We present a model to take into account the interface defects contribution on the binding energy of charged exciton in GaAs/AlGaAs quantum wells. The dependence of…