activity
20182021
most citedRobustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position

16 citations · 48 across the 4 of their papers we have counts for

collaborators

4 papers

cond-mat.mtrl-sci2021★ 6 cited

Photoluminescence of ion-synthesized 9R-Si inclusions in SiO2/Si structure: effect of irradiation dose and oxide film thickness

Alena Nikolskaya, Alexey Belov, Alexey Mikhaylov +3

The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal…

physics.app-ph2019★ 15 cited

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

A. V. Kudrin, V. P. Lesnikov, Yu. A. Danilov +10

The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed l…

cond-mat.mtrl-sci2019★ 16 cited

Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position

A. V. Kudrin, V. P. Lesnikov, Yu. A. Danilov +11

The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composi…

physics.app-ph2018★ 11 cited

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

A. V. Kudrin, O. V. Vikhrova, Yu. A. Danilov +7

We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically ac…