40 citations · 124 across the 6 of their papers we have counts for
6 papers
High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers
A. V. Kudrin, V. P. Lesnikov, Yu. A. Danilov +10
The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed l…
Ripplocation in graphite nanoplatelets during sonication assisted liquid phase exfoliation
A. V. Alaferdov, R. Savu, M. A. Canesqui +7
Defects induced by liquid-phase exfoliation of graphite using sonication were studied. It was shown that localized impact by cavitation shock waves can produce bulk ripplocations a…
The formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb layers
A. V. Kudrin, V. P. Lesnikov, D. A. Pavlov +8
Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated…
The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer
A. V. Kudrin, O. V. Vikhrova, Yu. A. Danilov +7
We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically ac…
High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor
A. V. Kudrin, Yu. A. Danilov, V. P. Lesnikov +6
The (In,Fe)Sb layers with the Fe content up to 13 at. % have been grown on (001) GaAs substrates using the pulsed laser deposition. The TEM investigations show that the (In,Fe)Sb l…
Anomalous Hall effect in two-phase semiconductor structures: the crucial role of ferromagnetic inclusions
A. V. Kudrin, A. V. Shvetsov, Yu. A. Danilov +5
The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained…