Depth dependent decoherence caused by surface and external spins for NV centers in diamond
arXiv:1709.09070 · doi:10.1103/PhysRevB.96.235443
Abstract
By efficient nanoscale plasma etching, the nitrogen-vacancy (NV) centers in diamond were brought to the sample surface step by step successfully. At each depth, we used the relative ratios of spin coherence times before and after applying external spins on the surface to present the decoherence, and investigated the relationships between depth and ratios. The values of relative ratios declined and then rised with the decreasing depth, which was attributed to the decoherence influenced by external spins, surface spins, discrete surface spin effects and electric field noise. Moreover, our work revealed a characteristic depth at which the NV center would experience relatively the strongest decoherence caused by external spins in consideration of inevitable surface spins. And the characteristic depth was found depending on the adjacent environments of NV centers and the density of surface spins.
7 pages, 5 figures
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- Diamond surface engineering for molecular sensing with nitrogen-vacancy centers
- Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride
- Spatially controlled fabrication of single NV centers in IIa HPHT diamond
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- Spin coherence and depths of single nitrogen-vacancy centers created by ion implantation into diamond via screening masks