Three-dimensional localization of spins in diamond using 12C implantation
arXiv:1405.7352 · doi:10.1063/1.4890613
Abstract
We demonstrate three-dimensional localization of a single nitrogen-vacancy (NV) center in diamond by combining nitrogen doping during growth with a post-growth 12C implantation technique that facilitates vacancy formation in the crystal. We show that the NV density can be controlled by the implantation dose without necessitating increase of the nitrogen incorporation. By implanting a large 12C dose through nanoscale apertures, we can localize an individual NV center within a volume of (~180 nm)**3 at a deterministic position while reproducibly preserving a coherence time (T2) > 300 μs. Our approach enables integration of NV centers into diamond nanostructures to realize scalable spin-sensing devices as well as coherent spin coupling mediated by photons and phonons.
21 pages, 3 figures
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Cited by in corpus (11)
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- Diamond surface engineering for molecular sensing with nitrogen-vacancy centers
- Deterministic coupling of delta-doped NV centers to a nanobeam photonic crystal cavity
- Nanoscale Sensing Using Point Defects in Single-Crystal Diamond: Recent Progress on Nitrogen Vacancy Center-Based Sensors
- Integrated Single Photon Emitters
- Construction and operation of a tabletop system for nanoscale magnetometry with single nitrogen-vacancy centers in diamond
- Depth dependent decoherence caused by surface and external spins for NV centers in diamond
- Creation of NV centers in diamond under 155 MeV electron irradiation
- Scalable, nanoscale positioning of highly coherent color centers in prefabricated diamond nanostructures
- Metalens formed by structured arrays of atomic emitters