Vertical distribution of nitrogen-vacancy centers in diamond formed by ion implantation and annealing
arXiv:0812.3905 · doi:10.1103/PhysRevB.79.125313
Abstract
Etching experiments were performed that reveal the vertical distribution of optically active nitrogen-vacancy (NV) centers in diamond created in close proximity to a surface through ion implantation and annealing. The NV distribution depends strongly on the native nitrogen concentration, and spectral measurements of the neutral and negatively-charged NV peaks give evidence for electron depletion effects in lower-nitrogen material. The results are important for potential quantum information and magnetometer devices where NV centers must be created in close proximity to a surface for coupling to optical structures.
arXiv comment9 pages, 6 figures
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