Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings
arXiv:1705.04794 · doi:10.1103/PhysRevB.95.125418
Abstract
This work presents theoretical demonstration of Aharonov-Bohm (AB) effect in monolayer phosphorene nanorings (PNR). Atomistic quantum transport simulations of PNR are employed to investigate the impact of multiple modulation sources on the sample conductance. In presence of a perpendicular magnetic field, we find that the conductance of both armchair and zigzag PNR oscillate periodically in a low-energy window as a manifestation of the AB effect. Our numerical results have revealed a giant magnetoresistance (MR) in zigzag PNR (with a maximum magnitude approaching two thousand percent). It is attributed to the AB effect induced destructive interference phase in a wide energy range below the bottom of the second subband. We also demonstrate that PNR conductance is highly anisotropic, offering an additional way to modulate MR. The giant MR in PNR is maintained at room temperature in the presence of thermal broadening effect.
7 pages, 7 figures
References in corpus (19)
- Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
- Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications
- Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
- The Renaissance of Black Phosphorus
- Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
- Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
- Superior mechanical flexibility of phosphorene and few-layer black phosphorus
- Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
- Environmental instability of few-layer black phosphorus
- Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating
- Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
- Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization
- High quality sandwiched black phosphorus heterostructure and its quantum oscillations
- Electrically Tunable Quasi-Flat Bands, Conductance and Field Effect Transistor in Phosphorene
- Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures
- Landau levels and magneto-transport property of monolayer phosphorene
- Patterns of the Aharonov-Bohm oscillations in graphene nanorings
- Dephasing in strongly anisotropic black phosphorus
- Transport, Aharonov-Bohm, and Topological Effects in Graphene Molecular Junctions and Graphene Nanorings