Performance of arsenene and antimonene double-gate MOSFETs from first principles

Abstract

In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed multiscale simulations of field-effect transistors based on arsenene and antimonene monolayers as channels. The accuracy of first-principles approaches in describing electronic properties is combined with the efficiency of tight-binding Hamiltonians based on maximally-localised Wannier functions to compute the transport properties of the devices. These simulations provide for the first time estimates on the upper limits for the electron and hole mobilities in the Takagi's approximation, including spin-orbit and multi-valley effects, and demonstrate that ultra-scaled devices in the sub-10 nm scale show a performance that is compliant with industry requirements.

14 pages, includes also Supplementary Information

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Cited by in corpus (12)

• GeP3: A small indirect band gap 2D crystal with high carrier mobility and strong interlayer quantum confinement
• 2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope
• Environmental Stability of Bismuthene: Oxidation Mechanism and Structural Stability of 2D Pnictogens
• Local Temperatures Out of Equilibrium
• Electronic properties of single-layer antimony: Tight-binding model, spin-orbit coupling and the strength of effective Coulomb interactions
• Valley-engineering mobilities in two-dimensional materials
• Few-layer antimonene electrical properties
• Ultrafast diffusive cross-sheet motion of lithium through antimonene with a 2+1 dimensional kinetics
• Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene
• An effective model for the electronic and optical properties of stanene
• Nanomechanics of Antimonene Allotropes
• 2D Black Phosphorus Carbide: Rippling and Formation of Nanotubes