Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition

Abstract

The integration of high-k oxide on graphene using atomic layer deposition requires an electrically reliable buffer layer. In this study, Y was selected as the buffer layer due to the highest oxidation ability in rare earth elements and various oxidation methods (atmospheric, high-pressure O2 and ozone) were applied to the Y metal buffer layer. By optimizing oxidation conditions of the top gate insulator, we successfully improve the capacitance of top gate Y2O3 insulator and demonstrate a large Ion/Ioff ratio for bilayer graphene under an external electric field.

References in corpus (5)

• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets
• Tunable Fractional Quantum Hall Phases in Bilayer Graphene
• The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition
• Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric field

Cited by in corpus (6)

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• All 2D Heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality
• Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor
• Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition
• Understanding interface properties in 2D heterostructure FETs
• Quantum-mechanical effect in atomically thin MoS2 FET