Universal growth scheme for entanglement-ready quantum dots
arXiv:1609.08457 · doi:10.1103/PhysRevApplied.8.014013
Abstract
Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fibre optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure-splitting (FSS) between exciton eigenstates. Moreover, QDs can be engineered to emit at standard telecom wavelengths. To achieve sufficient signal intensity for applications, QDs have been incorporated into 1D optical microcavities. However, combining these properties in a single device has so far proved elusive. Here, we introduce a growth strategy to realise QDs with small FSS in the conventional telecom band, and within an optical cavity. Our approach employs droplet-epitaxy of InAs quantum dots on (001) substrates. We show the scheme improves the symmetry of the dots by 72%. Furthermore, our technique is universal, and produces low FSS QDs by molecular beam epitaxy on GaAs emitting at ~900nm, and metal-organic vapour phase epitaxy on InP emitting at 1550 nm, with mean FSS 4x smaller than for Stranski-Krastanow QDs.
13 pages, 4 figues
References in corpus (10)
- Towards quantum dot arrays of entangled photon emitters
- Electric-field-induced coherent coupling of the exciton states in a single quantum dot
- Magnetic-field-induced reduction of the exciton polarization splitting in InAs quantum dots
- Inversion of exciton level splitting in quantum dots
- Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling
- Symmetric quantum dots as efficient sources of highly entangled photons
- Strain-tunable entangled-light-emitting diodes with high yield and fast operation speed
- Control of fine-structure splitting of individual InAs quantum dots by rapid thermal annealing
- Highly-reduced Fine-structure splitting in InAs/InP quantum dots offering efficient on-demand 1.55 m entangled photon emitter
- Wavelength extension beyond 1.5 micrometer in symmetric InAs quantum dots on InP(111)A using droplet epitaxy
Cited by in corpus (27)
- Droplet Epitaxy of Semiconductor Nanostructures for Quantum Photonic Devices
- Quantum dots for photonic quantum information technology
- A quantum light emitting diode for the standard telecom window around 1550 nm
- Semiconductor quantum dots as an ideal source of polarization entangled photon pairs on-demand: a review
- Quantum teleportation using highly coherent emission from telecom C-band quantum dots
- High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy
- Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si
- Telecom wavelength single quantum dots with very small excitonic fine-structure splitting
- GHz-clocked teleportation of time-bin qubits with a telecom C-band quantum dot
- High performance single-photon sources at telecom wavelength based on broadband hybrid circular Bragg gratings
- Quantum-dot based telecom-wavelength quantum relay
- Long-term transmission of entangled photons from single quantum dot over deployed fiber
- Proposed Scheme to Generate Bright Entangled Photon Pairs by Application of a Quadrupole Field to a Single Quantum Dot
- Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties
- Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 m
- 1GHz clocked distribution of electrically generated entangled photon pairs
- Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
- Correlations between Optical Properties and Voronoi-Cell Area of Quantum Dots
- Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band
- Fine structure splitting analysis of cavity-enhanced telecom-wavelength InAs quantum dots grown on a GaAs(111)A vicinal substrate
- Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A
- Hidden anisotropy controls spin-photon entanglement in a charged quantum dot
- Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots
- Converting single photons from an InAs/GaAs quantum dot into the ultraviolet: preservation of second-order correlations
- Effect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots
- Mechanisms and Opportunities for Tunable High-Purity Single Photon Emitters: A Review of Hybrid Perovskites and Prospects for Bright Squeezed Vacuum
- An intuitive scheme for the restoration of entanglement for polarization-entangled photons emitted from quantum dots with non-vanishing fine structure splitting