Infrared fingerprints of few-layer black phosphorus

Abstract

Black phosphorus is an infrared layered material. Its bandgap complements other widely studied two-dimensional materials: zero-gap graphene and visible/near-infrared gap transition metal dichalcogenides. Though highly desirable, a comprehensive infrared characterization is still lacking. Here we report a systematic infrared study of mechanically exfoliated few-layer black phosphorus, with thickness ranging from 2 to 15 layers and photon energy spanning from 0.25 to 1.36 eV. Each few-layer black phosphorus exhibits a thickness-dependent unique infrared spectrum with a series of absorption resonances, which reveals the underlying electronic structure evolution and serves as its IR fingerprints. Surprisingly, unexpected absorption features, which are associated with the forbidden optical transitions, have been observed. Furthermore, we unambiguously demonstrate that controllable uniaxial strain can be used as a convenient and effective approach to tune the electronic structure of few-layer black phosphorus. Our study paves the way for black phosphorus applications in infrared photonics and optoelectronics.

updated version, add new data for strain engineering of few-layer BP electronic structures. Paper has been published in Nature Communications

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Cited by in corpus (20)

• Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook
• Strain-tunable van der Waals interactions in few-layer black phosphorus
• Mid-infrared Electro-Optic Modulation in Few-layer Black Phosphorus
• The Optical Properties and Plasmonics of Anisotropic 2-Dimensional Materials
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• Multilayers black phosphorus: from tight-binding to continuum description
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• Ultrasensitive Tunability of the Direct Bandgap of Two-dimensional InSe Flakes via Strain Engineering
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