Simulation of Channeling and Radiation of 855 MeV Electrons and Positrons in a Small-Amplitude Short-Period Bent Crystal

Abstract

Channeling and radiation are studied for the relativistic electrons and positrons passing through a Si crystal periodically bent with a small amplitude and a short period. Comprehensive analysis of the channeling process for various bending amplitudes is presented on the grounds of numerical simulations. The features of the channeling are highlighted and elucidated within an analytically developed continuous potential approximation. The radiation spectra are computed and discussed.

30 pages, 21 figures, Submitted to Phys. Rev. A

References in corpus (2)

• Crystalline Undulator with a Small Amplitude and a Short Period
• Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal

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