Planar Channeling of 855 MeV Electrons in Silicon: Monte-Carlo Simulations

Abstract

A new Monte Carlo code for the simulation of the channeling of ultrarelativistic charged projectiles in single crystals is presented. A detailed description of the underlying physical model and the computation algorithm is given. First results obtained with the code for the channeling of 855 MeV electrons in Silicon crystal are presented. The dechanneling lengths for (100), (110) and (111) crystallographic planes are estimated. In order to verify the code, the dependence of the intensity of the channeling radiation on the crystal dimension along the beam direction is calculated. A good agreement of the obtained results with recent experimental data is observed.

22 pages, 10 figures. Version 3: misprints in Eqs. (2) and (29) have been corrected

References in corpus (2)

• Feasibility of an electron-based crystalline undulator
• Negative Particle Planar and Axial Channeling and Channeling Collimation

Cited by in corpus (12)

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• Simulation of Channeling and Radiation of 855 MeV Electrons and Positrons in a Small-Amplitude Short-Period Bent Crystal
• Simulations of electron channeling in bent silicon crystal
• Channeling and radiation of the 855 MeV electrons enhanced by the re-channeling in a periodically bent diamond crystal
• Sub-GeV Electron and Positron Channeling in Straight, Bent and Periodically Bent Silicon Crystals
• Monte-Carlo Simulations of Electron Channelling: a Bent (110) Channel in Silicon
• Recent Progress in the Theory of the Crystalline Undulator
• Atomistic modelling of the channeling process with radiation reaction force included
• Quantum versus classical approach of dechanneling and incoherent electromagnetic processes in aligned crystals
• Comment on `Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal'