Simulations of electron channeling in bent silicon crystal

Abstract

We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed using the newly developed part [1] of the MBN Explorer package [2,3], which simulates classical trajectories of in a crystalline medium by integrating the relativistic equations of motion with account for the interaction between the projectile and crystal atoms. A Monte Carlo approach is employed to sample the incoming electrons and to account for thermal vibrations of the crystal atoms. The electron channeling along Si(110) crystallographic planes are studied for the projectile energies 195--855 MeV and different curvatures of the bent crystal.

10 pages, 4 figures

References in corpus (1)

• Planar Channeling of 855 MeV Electrons in Silicon: Monte-Carlo Simulations

Cited by in corpus (6)

• All-atom relativistic molecular dynamics simulations of channeling and radiation processes in oriented crystals
• Simulation of Channeling and Radiation of 855 MeV Electrons and Positrons in a Small-Amplitude Short-Period Bent Crystal
• Atomistic modelling and characterizaion of light sources based on small-amplitude short-period periodically bent crystals
• Channeling and Radiation of 855 MeV Electrons and Positrons in Straight and Bent Tungsten (110) Crystals
• Comment on 'Simulation of ultra-relativistic electrons and positrons channeling in crystals with MBN Explorer'
• Linear Theory Analysis of Self-Amplified Parametric X-ray Radiation from High Current Density Electron Bunches