Atomistic modelling and characterizaion of light sources based on small-amplitude short-period periodically bent crystals

Abstract

The feasibility of gamma-ray light sources based on the channeling phenomenon of ultrarelativistic electrons and positrons in oriented crystals that are periodically bent with Small Amplitude and Short Period (SASP) is demonstrated by means of rigorous numerical modelling that accounts for the interaction of a projectile with all atoms of the crystalline environment. Numerical data on the spectral distribution, brilliance, number of photons and power of radiation emitted by 10 GeV electron and positron beams passing through diamond, silicon and germanium crystals are presented and analyzed. The case studies presented in the paper refer to the FACET-II beams available at the SLAC facility. It is shown that the SASP bending gives rise to the radiation enhancement in the GeV photon energy range where the peak brilliance of radiation can be as high as on the 10^{24} photons/s/mrad^2/mm^2/0.1BW. The parameters of radiation can be tuned by varying the amplitude and period of bending.

arXiv comment25 pages, 17 figures

References in corpus (14)

• Coherent radiation of an ultra-relativistic charged particle channeled in a periodically bent crystal
• Photon emission by an ultra-relativistic particle channeling in a periodically bent crystal
• Channeling of Positrons through Periodically Bent Crystals: on Feasibility of Crystalline Undulator and Gamma-Laser
• Simulation of Ultra-Relativistic Electrons and Positrons Channeling in Crystals with MBN Explorer
• Crystalline Undulator with a Small Amplitude and a Short Period
• Steering of Sub-GeV electrons by ultrashort Si and Ge bent crystals
• Crystal-based intensive gamma-ray light sources
• All-atom relativistic molecular dynamics simulations of channeling and radiation processes in oriented crystals
• Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal
• Simulation of Channeling and Radiation of 855 MeV Electrons and Positrons in a Small-Amplitude Short-Period Bent Crystal
• Channeling experiments at planar diamond and silicon single crystals with electrons from the Mainz Microtron MAMI
• Simulations of electron channeling in bent silicon crystal
• Extremely brilliant crystal-based light sources
• Bright Ångstrom and Picometre Free Electron Laser Based on the LHeC Energy Recovery Linac

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• Precise control of high-frequency ultrasounds in thin crystals for the development of tunable narrowband and directional gamma-ray sources
• Structural effects of boron doping in diamond crystals for gamma-ray light-source applications: Insights from molecular dynamics simulations