All-atom relativistic molecular dynamics simulations of channeling and radiation processes in oriented crystals

Abstract

We review achievements made in recent years in the field of numerical modeling of ultra-relativistic projectiles propagation in oriented crystals, radiation emission and related phenomena. This topic is highly relevant to the problem of designing novel gamma-ray light sources based on the exposure of oriented crystals to the beams of ultra-relativistic charged particles. The paper focuses on the approaches that allow for advanced computation exploration beyond the continuous potential and the binary collisions frameworks. A comprehensive description of the multiscale all-atom relativistic molecular dynamics approach implemented in the MBN Explorer package is given. Several case studies related to modeling of ultra-relativistic projectiles (electrons, positron and pions) channeling and photon emission in oriented straight, bent and periodically bent crystals are presented. In most cases, the input data used in the simulations, such as crystal orientation and thickness, the bending radii, periods and amplitudes, as well as the energies of the projectiles, have been chosen to match the parameters used in the accomplished and the ongoing experiments. Wherever available the results of calculations are compared with the experimental data and/or the data obtained by other numerical means.

60 pages, 34 figures

References in corpus (9)

• Crystalline Undulator with a Small Amplitude and a Short Period
• Steering of Sub-GeV electrons by ultrashort Si and Ge bent crystals
• Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal
• Radiation Reaction near the Classical Limit in Aligned Crystals
• Channeling experiments at planar diamond and silicon single crystals with electrons from the Mainz Microtron MAMI
• Complete treatment of single-photon emission in planar channeling
• The influence of the structure imperfectness of a crystalline undulator on the emission spectrum
• Electron channeling experiments with bent silicon single crystals -- a reanalysis based on a modified Fokker-Planck equation
• Forward Diffracted Parametric X Radiation From a Thick Tungsten Single Crystal at 855 MeV Electron Energy

Cited by in corpus (9)

• Condensed Matter Systems Exposed to Radiation: Multiscale Theory, Simulations, and Experiment
• Atomistic modelling and characterizaion of light sources based on small-amplitude short-period periodically bent crystals
• De-channeling in terms of instantaneous transition rates -- Computer simulations for 855 MeV electrons at (110) planes of diamond
• Advances in multiscale modeling for novel and emerging technologies
• Atomistic modelling of the channeling process with radiation reaction force included
• Beam steering with quasi-mosaic bent silicon single crystals -- Computer simulations for 855 MeV and 6.3 GeV electrons and comparison with experiments
• Frequency splitting in undulator radiation from solid-state crystalline undulator
• A Novel Tool for Advanced Analysis of Geant4 Simulations of Charged Particles Interactions in Oriented Crystals
• Influence of bending parameters on crystalline undulator radiation peak stability for 530 MeV positron channelling