Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal

Abstract

A periodically bent Si crystal is shown to efficiently serve for producing highly monochromatic radiation in a gamma-ray energy spectral range. A short-period small-amplitude bending yields narrow undulator-type spectral peaks in radiation from multi-GeV electrons and positrons channeling through the crystal. Benchmark theoretical results on the undulator are obtained by simulations of the channeling with a full atomistic approach to the projectile-crystal interactions over the macroscopic propagation distances. The simulations are facilitated by employing the MBN Explorer package for molecular dynamics calculations on the meso- bio- and nano-scales. The radiation from the ultra-relativistic channeling projectiles is computed within the quasi-classical formalism. The effects due to the quantum recoil are shown to be significantly prominent in the gamma-ray undulator radiation.

References in corpus (4)

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• Photon emission by an ultra-relativistic particle channeling in a periodically bent crystal
• Simulation of Ultra-Relativistic Electrons and Positrons Channeling in Crystals with MBN Explorer
• Crystalline Undulator with a Small Amplitude and a Short Period

Cited by in corpus (9)

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• Atomistic modelling and characterizaion of light sources based on small-amplitude short-period periodically bent crystals
• Interplay and specific features of radiation mechanisms of electrons and positrons in crystalline undulators
• Advances in multiscale modeling for novel and emerging technologies
• Comment on `Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal'