Comment on `Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal'
arXiv:1709.08007 · doi:10.1088/1361-6455/aacd78
Abstract
Simulations of electron and positron channelling in a crystalline undulator with a small amplitude and a short period (A Kostyuk, Phys. Rev. Lett. 110 (2013) 115503) were repeated by V G Bezchastnov, A V Korol and A V Solov'yov (J. Phys. B: At. Mol. Opt. Phys. 47 (2014) 195401)for the same parameter set but using another computer code, MBN Explorer, which implements a different model of projectile scattering by crystal atoms. The authors of the latter paper claim that their approach, in contrast to the one of the former paper, allows them to observe short-period undulator oscillations in plots of simulated trajectories. In fact, the undulator oscillations become visible on trajectory segments which have a small amplitude of channelling oscillations. This is equally true for both approaches. The claim of Bezchastnov et al. that their model is "more accurate" is unfounded. Moreover, there are indications of severe mistakes in their calculations: the phases of undulator oscillations in the trajectories obtained with MBN Explorer are inconsistent with each other and with well established properties of forced oscillations.
7 pages, 1 figure. The present version, v2, is shorter than v1, because a part of material has been moved to arXiv:1802.02529. Still, v2 is more detailed than the journal version
References in corpus (6)
- Simulation of Ultra-Relativistic Electrons and Positrons Channeling in Crystals with MBN Explorer
- Crystalline Undulator with a Small Amplitude and a Short Period
- Planar Channeling of 855 MeV Electrons in Silicon: Monte-Carlo Simulations
- Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal
- Monte-Carlo Simulations of Electron Channelling: a Bent (110) Channel in Silicon
- Recent Progress in the Theory of the Crystalline Undulator