Monte-Carlo Simulations of Electron Channelling: a Bent (110) Channel in Silicon

Abstract

Results obtained with a new Monte-Carlo code ChaS for channeling of 855 MeV electrons along the crystallographic plane (110) in a bent silicon crystal are presented. The dependence of the dechanneling length and the asymptotic acceptance of the channel on the crystal bending is studied.

8 pages, 8 figures

References in corpus (4)

• Feasibility of an electron-based crystalline undulator
• Crystalline Undulator with a Small Amplitude and a Short Period
• Planar Channeling of 855 MeV Electrons in Silicon: Monte-Carlo Simulations
• Electron-based crystalline undulator

Cited by in corpus (1)

• Comment on `Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal'