Feasibility of an electron-based crystalline undulator

Abstract

The feasibility to generate powerful monochromatic radiation of the undulator type in the gamma region of the spectrum by means of planar channeling of ultra-relativistic electrons in a periodically bent crystal is proven. It is shown that an electron-based crystalline undulator operates in the regime of higher beam energies than a positron-based one does. A numerical analysis is performed for a 50 GeV electron channeling in Si along the (111) crystallographic planes.

4 pages, 4 figures, revtex, submitted to PRL

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Cited by in corpus (16)

• Simulation of Ultra-Relativistic Electrons and Positrons Channeling in Crystals with MBN Explorer
• Crystalline Undulator with a Small Amplitude and a Short Period
• Experimental evidence of planar channeling in a periodically bent crystal
• Crystal-based intensive gamma-ray light sources
• Planar Channeling of 855 MeV Electrons in Silicon: Monte-Carlo Simulations
• Investigation on radiation generated by Sub-GeV electrons in ultrashort Si and Ge bent crystals
• Geant4 simulation model of electromagnetic processes in oriented crystals for accelerator physics
• The influence of the structure imperfectness of a crystalline undulator on the emission spectrum
• Stable propagation of a modulated positron beam in a bent crystal channel
• First design of a crystal-based extraction of 6 GeV electrons for the DESY II Booster Synchrotron
• Demodulation of a positron beam in a bent crystal channel
• Interplay and specific features of radiation mechanisms of electrons and positrons in crystalline undulators
• One-dimensional Model of a Gamma Klystron
• Recent Progress in the Theory of the Crystalline Undulator
• Monte-Carlo Simulations of Electron Channelling: a Bent (110) Channel in Silicon
• Incoherent bremsstrahlung in flat and bent crystals