Electron-based crystalline undulator

Abstract

We discuss the features of a crystalline undulator of the novel type based on the effect of a planar channeling of ultra-relativistic electrons in a periodically bent crystals. It is demonstrated that an electron-based undulator is feasible in the tens of GeV range of the beam energies, which is noticeably higher than the energy interval allowed in a positron-based undulator. Numerical analysis of the main parameters of the undulator as well as the characteristics of the emitted undulator radiation is carried out for 20 and 50 GeV electrons channeling in diamond and silicon crystals along the (111) crystallographic planes.

16 pages, 8 figures, Latex, IOP style

References in corpus (10)

• The Cosmological Parameters 2006
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• The influence of the dechanneling process on the photon emission by an ultra-relativistc positron channeling in a periodically bent crystal
• Total energy losses due to the radiation in an acoustically based undulator: the undulator and the channeling radiation included
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• Number of photons and brilliance of the radiation from a crystalline undulator

Cited by in corpus (5)

• Feasibility of an electron-based crystalline undulator
• The influence of the structure imperfectness of a crystalline undulator on the emission spectrum
• One-dimensional Model of a Gamma Klystron
• Monte-Carlo Simulations of Electron Channelling: a Bent (110) Channel in Silicon
• Channeling and Radiation of 855 MeV Electrons and Positrons in Straight and Bent Tungsten (110) Crystals