66 citations · 272 across the 12 of their papers we have counts for
12 papers
Fine structure of the exciton absorption in semiconductor superlattices in crossed electric and magnetic fields
B. S. Monozon, V. G. Bezchastnov, P. Schmelcher
The exciton absorption coefficient is determined analytically for a semiconductor superlattice in crossed electric and magnetic fields, for the magnetic field being parallel and th…
Cyclotron transitions of bound ions
Victor G. Bezchastnov, George G. Pavlov
A charged particle in a magnetic field possesses discrete energy levels associated with particle's rotation around the field lines. The radiative transitions between these levels a…
Channeling and radiation of the 855 MeV electrons enhanced by the re-channeling in a periodically bent diamond crystal
Andrei V. Korol, Victor G. Bezchastnov, Andrey V. Solov'yov
Channeling properties and radiation spectra are studied on the grounds of numerical simulations for the 855 MeV electrons in a periodically bent diamond crystal. The bent crystalli…
Simulation of Channeling and Radiation of 855 MeV Electrons and Positrons in a Small-Amplitude Short-Period Bent Crystal
Andrei V. Korol, Victor G. Bezchastnov, Gennady B. Sushko +1
Channeling and radiation are studied for the relativistic electrons and positrons passing through a Si crystal periodically bent with a small amplitude and a short period. Comprehe…
Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal
Victor G. Bezchastnov, Andrei V. Korol, Andrey V. Solovyov
A periodically bent Si crystal is shown to efficiently serve for producing highly monochromatic radiation in a gamma-ray energy spectral range. A short-period small-amplitude bendi…
Simulations of electron channeling in bent silicon crystal
G B Sushko, V G Bezchastnov, A V Korol +4
We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed us…