24 citations · 85 across the 11 of their papers we have counts for
12 papers
A quantum model of charge capture and release onto/from deep traps
Ivan I. Vrubel, Vasilii Khanin, Markus Suta +2
The rapid development of optical technologies and applications revealed the critical role of point defects affecting device performance. One of the powerful tools to study influenc…
Crystal polarity discrimination for GaN nanowires on graphene
Alexander Pavlov, Alexey Mozharov, Yury Berdnikov +5
We present experimental data and computational analysis of the formation of GaN nanowires on graphene virtual substrates. We show that GaN nanowires on graphene exhibit nitrogen po…
High refractive index and extreme biaxial optical anisotropy of rhenium diselenide for applications in all-dielectric nanophotonics
Roman Polozkov, Anton Shubnik, Ivan Shelykh +1
We establish simple quantitative criterium for the search of new dielectric materials with high values of the refractive index in the visible range. It is demonstrated, that for li…
Carbon nanotube array as a van der Waals two-dimensional hyperbolic material
R. G. Polozkov, N. Y. Senkevich, S. Morina +3
We use an ab-initio approach to design and study a novel two-dimensional material - a planar array of carbon nanotubes separated by an optimal distance defined by the van der Waals…
Ab-initio modeling of an anion pseudopotential for fullerene-based compounds
I. I. Vrubel, R. G. Polozkov, V. K. Ivanov
A pseudopotential of has been constructed from ab-initio quantum-mechanical calculations. Since the obtained pseudopotential can be easily fitted by rather simple analyt…
Radiation Emission by Electrons Channeling in Bent Silicon Crystals
R G Polozkov, V K Ivanov, G B Sushko +2
Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystal. The projectile trajectories are computed…
Simulations of electron channeling in bent silicon crystal
G B Sushko, V G Bezchastnov, A V Korol +4
We report on the results of theoretical simulations of the electron channeling in a bent silicon crystal. The dynamics of ultra-relativistic electrons in the crystal is computed us…
Hybridization-related correction to the jellium model for fullerenes
A. V. Verkhovtsev, R. G. Polozkov, V. K. Ivanov +2
We introduce a new type of correction for a more accurate description of fullerenes within the spherically symmetric jellium model. This correction represents a pseudopotential whi…
Role of exchange interaction in self-consistent calculations of endohedral fullerenes
Alexey V. Verkhovtsev, Roman G. Polozkov, Vadim K. Ivanov +2
Results of the self-consistent calculation of electronic structure of endohedral fullerene Ar@C within the Hartree-Fock and the local density approximations are presented. H…
Giant Rabi splitting in metallic cluster-cavity system
I. G. Savenko, R. G. Polozkov, I. A. Shelykh
We investigate theoretically the photo absorbtion of the cluster of alkali atoms embedded into a single mode quantum microcavity. We show that when the energy of the giant plasmoni…
Many-body theory for angular resolved photoelectron spectra of metal clusters
Andrey V. Solov'yov, Roman G. Polozkov, Vadim K. Ivanov
Angular resolved photoelectron spectra of metal clusters have been experimentally measured for the first time only recently. These measurements have been performed systematically f…
Photoionization of the fullerene ion C60+
R. G. Polozkov, V. K. Ivanov, A. V. Solov'yov
Photoionization cross section of the fullerene ion C60+ has been calculated within a single-electron approximation and also by using a consistent many-body theory accounting for ma…