Radio frequency reflectometry and charge sensing of a precision placed donor in silicon

Abstract

We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET). By measuring the conductance through the SET and comparing this with the phase shift of the reflected RF excitation from the reservoir, we can discriminate between charge transfer within the SET channel and tunneling between the donor and reservoir. The RF measurement allows observation of donor electron transitions at every charge degeneracy point in contrast to the SET conductance signal where charge transitions are only observed at triple points. The tunnel coupled reservoir has the advantage of a large effective lever arm (~35%) allowing us to independently extract a neutral donor charging energy ~62 +/- 17meV. These results demonstrate that we can replace three terminal transistors by a single terminal dispersive reservoir, promising for high bandwidth scalable donor control and readout.

5 pages, 3 figures. Copyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

References in corpus (6)

• Single-shot read-out of an individual electron spin in a quantum dot
• Storing quantum information for 30 seconds in a nanoelectronic device
• A high-sensitivity gate-based charge sensor in silicon
• Mesoscopic admittance of a double quantum dot
• Spin-lattice relaxation times of single donors and donor clusters in silicon
• Radio-frequency dispersive detection of donor atoms in a field-effect transistor

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• Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots
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