Random gauge field effects on the conductivity of graphene sheets with disordered ripples

Abstract

We study the effect of disordered ripples on the conductivity of monolayer graphene flakes. We calculate the relaxation times and the Boltzmann conductivities associated with two mechanisms. First, we study the conductivity correction due to an external in-plane magnetic field $B_{\parallel }$. Due to the irregular local curvature found at graphene sheets deposited over a substrate, $B_{\parallel }$ can be mapped into an effective random magnetic field perpendicular to the graphene surface. Second, we study the electron momentum relaxation due to intrinsic pseudo magnetic fields originated from deformations and strain. We find that the competition between these mechanisms gives rise to a strong anisotropy in the conductivity tensor. This result provides a new strategy to quantitatively infer the strength of pseudo-magnetic fields in rippled graphene flakes.

arXiv comment11 pages, 7 figures. Submitted to Physical Review B

References in corpus (28)

• The electronic properties of graphene
• Electronic transport in two dimensional graphene
• Atomic Structure of Graphene on SiO2
• Colloquium: The transport properties of graphene: An introduction
• Gauge fields in graphene
• Weak localisation magnetoresistance and valley symmetry in graphene
• Electron scattering on microscopic corrugations in graphene
• Electron transport in disordered graphene
• Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO2
• Graphene as an electronic membrane
• Symmetry-based approach to electron-phonon interactions in graphene
• Gauge field induced by ripples in graphene
• The recursive Green's function method for graphene
• Spatially resolved spectroscopy of monolayer graphene on SiO2
• Space dependent Fermi velocity in strained graphene
• Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
• Disorder and Electronic Transport in Graphene
• Numbers of donors and acceptors from transport measurements in graphene
• High-fidelity conformation of graphene to SiO2 topographic features
• Conductivity and Fano factor in disordered graphene
• Effect of short- and long-range scattering in the conductivity of graphene: Boltzmann approach vs tight-binding calculations
• Geometrical and topological aspects of graphene and related materials
• Rippled Graphene in an In-Plane Magnetic Field: Effects of a Random Vector Potential
• Random Berry Phase Magnetoresistance as a Probe of Interface Roughness in Si MOSFETs
• Orbital Effects of In-Plane Magnetic Fields Probed by Mesoscopic Conductance Fluctuations
• Solution of the Boltzmann equation in a random magnetic field
• Anisotropic magnetoresistance in a 2DEG in a quasi-random magnetic field
• Quantum Corrections to Thermopower and Conductivity in Graphene

Cited by in corpus (13)

• Electronic and optical properties of strained graphene and other strained 2D materials: a review
• Gauge fields in graphene with nonuniform elastic deformations: A quantum field theory approach
• Strain-displacement relations and strain engineering in 2d materials
• Effective Dirac Hamiltonian for anisotropic honeycomb lattices: optical properties
• Low-energy theory for strained graphene: an approach up to second-order in the strain tensor
• Perfect transmission and Aharanov-Bohm oscillations in topological insulator nanowires with nonuniform cross section
• Interplay between nanometer-scale strain variations and externally applied strain in graphene
• Complex Landau levels and related transport properties in the strained zigzag graphene nanoribbons
• Spin relaxation in disordered graphene: Interplay between puddles and defect-induced magnetism
• Low-energy quantum scattering induced by graphene ripples
• Effective tunnel conductance and effective ac conductivity of randomly strained graphene
• Nondiagonal Graphene Conductivity in the Presence of In-Plane Magnetic Fields
• Two Dimensional Honeycomb Materials: random fields, dissipation and fluctuations