Low-energy quantum scattering induced by graphene ripples

Abstract

We report a quantum study of the carrier scattering induced by graphene ripples. Crucial differences between the scattering induced by the ripple and ordinary scattering were found. In contrast to the latter, in which the Born approximation is valid for high-energy process, the former is valid for the low-energy process with a quite broad energy range. Furthermore, in polar symmetry ripples, the scattering amplitude exhibits a pseudo-spin structure, an additional factor $\cos \theta /2$, which leads to an absence of backward scattering. We also elucidate that the scattering cross sections are proportional to the energy cubed of the incident carrier.

References in corpus (13)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• The structure of suspended graphene sheets
• Atomic Structure of Graphene on SiO2
• Ripple Texturing of Suspended Graphene Atomic Membranes
• High-Resolution Scanning Tunneling Microscopy Imaging of Mesoscopic Graphene Sheets on an Insulating Surface
• On the roughness of single- and bi-layer graphene membranes
• Electron scattering on microscopic corrugations in graphene
• Charge inhomogeneities due to smooth ripples in graphene sheets
• Weyl-Gauge Symmetry of Graphene
• Random gauge field effects on the conductivity of graphene sheets with disordered ripples
• Using Weyl symmetry to make Graphene a real lab for fundamental physics
• Anomalous Valley Magnetic Moment of Graphene

Cited by in corpus (1)

• Enhanced asymmetric valley scattering by scalar fields in non-uniform out-of-plane deformations in graphene