Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures
arXiv:1412.0717 · doi:10.1088/2053-1583/2/1/011001
Abstract
As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN (hBN) heterostructures with one-dimensional (1D) edge contacts. These transistors are stable in ambient conditions for >300 hours, and display ambipolar behavior, a gate-dependent metal-insulator transition, and mobility up to 4000 /Vs. At low temperatures, we observe gate-tunable Shubnikov de Haas (SdH) magneto-oscillations and Zeeman splitting in magnetic field with an estimated g-factor ~2. The cyclotron mass of few-layer phosphorene holes is determined to increase from 0.25 to 0.31 as the Fermi level moves towards the valence band edge. Our results underscore the potential of few-layer phosphorene (FLP) as both a platform for novel 2D physics and an electronic material for semiconductor applications.
minor correction of typos, equations and references
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- Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating
- Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications
- The Critical Role of Substrate in Stabilizing Phosphorene Nanoflake: A Theoretical Exploration
- Effects of extrinsic point defects in phosphorene: B, C, N, O and F Adatoms
- A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices
- Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
- Anisotropic buckling of few-layer black phosphorus
- Monolayer black phosphorus by sequential wet-chemical surface oxidation
- Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings
- Simulated scanning tunneling microscopy images of few-layer-phosphorus capped by graphene and hexagonal boron nitride monolayers
- Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport