Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex

Abstract

We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS2-xSex. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 uW/cmK2 at around 470 deg. C for LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 deg. C in LaOBiS1.2Se0.8.

arXiv comment13 pages, 3 figs

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• Electronic Origins of Large Thermoelectric Power Factor of LaOBiS2-xSex
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