Performance limits projection of black phosphorous field-effect transistors

Abstract

Ballistic device performance of monolayer black phosphorous (BP) field-effect transistors (FET) is investigated in this work. Due to the anisotropic effect mass of the carriers, the ON-state current is dependent on the transport direction. The effective masses are lower in the "armchair" direction which provides higher drive current at the same biasing. The degree of anisotropy is higher for the holes, which improves the performance of p-type devices. The intrinsic delay of 20 nm BP FETs is in the range of 50 fs at ON-/OFF-current ratio of 4 orders. Monolayer BP FETs outperform both MoS${}_2$ and Si FETs for both n- and p-type devices in terms of ballistic performance limits, due to highly anisotropic band structure.

5 pages, 1 table, 4 figures (Submitted; Accepted)

References in corpus (7)

• Black phosphorus field-effect transistors
• Phosphorene: A New 2D Material with High Carrier Mobility
• Van der Waals density functionals applied to solids
• High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
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Cited by in corpus (12)

• Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications
• Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
• Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors
• Performance of arsenene and antimonene double-gate MOSFETs from first principles
• Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs
• Electronic Structure and the Properties of Phosphorene Systems
• Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
• Phosphorene and Doped Monolayers Interfaced TiO${}_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells
• Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance
• Uniform Benchmarking of Low Voltage Van Der Waals FETs
• Modeling of Anisotropic Two-Dimensional Materials Monolayer HfS2 and Phosphorene MOSFETs
• Impact of Orientation Misalignments on Black Phosphorus Ultrascaled Field-effect Transistors