Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering

Abstract

Atomically precise tailoring of graphene can enable unusual transport pathways and new nanometer-scale functional devices. Here we describe a recipe for the controlled production of highly regular "5-5-8" line defects in graphene by means of simultaneous electron irradiation and Joule heating by applied electric current. High-resolution transmission electron microscopy reveals individual steps of the growth process. Extending earlier theoretical work suggesting valley-discriminating capabilities of a graphene 5-5-8 line defect, we perform first-principles calculations of transport and find a strong energy dependence of valley polarization of the charge carriers across the defect. These findings inspire us to propose a compact electrostatically gated "valley valve" device, a critical component for valleytronics.

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Cited by in corpus (20)

• Polycrystalline graphene and other two-dimensional materials
• Strain controlled valley filtering in multi-terminal graphene structures
• Grain Boundaries in Graphene on SiC(000$\bar{1}$) Substrate
• Valley Seebeck effect in gate tunable zigzag graphene nanoribbons
• Electron dynamics in strained graphene
• Perfect valley filter controlled by Fermi velocity modulation in graphene
• Transmission spectra and valley processing of graphene and carbon nanotube superlattices with inter-valley coupling
• Minimal Geometry for Valley Filtering in Graphene
• Valley current generation using biased bilayer graphene dots
• RKKY interaction between extended magnetic defect lines in graphene
• Valley filtering by a line-defect in graphene: quantum interference and inversion of the filter effect
• Intervalley scattering of graphene massless Dirac fermions at 3-periodic grain boundaries
• Growth, charge and thermal transport of flowered graphene
• Depressions by stacking faults in nanorippled graphene on metals
• Switchable valley functionalities of an $n-n^{-}-n$ junction in 2D semiconductors
• Valley filters, accumulators, and switches induced in graphene quantum dots by lines of adsorbed hydrogen atoms
• Probing barrier transmission in ballistic graphene
• Kinetically determined shapes of grain boundaries in CVD graphene
• Emergence of Type-I and Type-II Dirac line nodes in penta-octa-graphene
• Localized electronic states at grain boundaries on the surface of graphene and graphite