RKKY interaction between extended magnetic defect lines in graphene
arXiv:1406.0759 · doi:10.1103/PhysRevB.90.125411
Abstract
Of fundamental interest in the field of spintronics is the mechanism of indirect exchange coupling between magnetic impurities embedded in metallic hosts. A range of physical features, such as magnetotransport and overall magnetic moment formation, are predicated upon this magnetic coupling, often referred to as the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. Recent theoretical studies on the RKKY in graphene have been motivated by possible spintronic applications of magnetically doped graphene systems. In this work a combination of analytic and numerical techniques are used to examine the effects of defect dimensionality on such an interaction. We show, in a mathematically transparent manner, that moving from single magnetic impurities to extended lines of impurities effectively reduces the dimensionality of the system and increases the range of the interaction. This has important consequences for the spintronic application of magnetically-doped and we illustrate this with a simple magnetoresistance device.
arXiv comment6 pages, 5 figures
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- MN4 Embedded Graphene Layers: Tunable Decay Rate of RKKY Interaction
- Floquet-driven indirect exchange interaction mediated by topological insulator surface states
- Power law decay of local density of states oscillations near a line defect in a system with semi-Dirac points
- Exact Green's function approach to RKKY interactions
- Selective generation and amplification of RKKY interactions by P-N interface
- The emergence of interface states in graphene/transition metal dichalcogenides heterostructure with lateral interface